Fairchild Semiconductor fdv304p free download

File name fdv304p.pdf

August 1997 FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is -25 V, -0.46 A continuous, -1.5 A Peak. produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 V technology. This very high density process is tailored to minimize RDS(ON) = 1.5 @ VGS= -2.7 V. on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications Very low level gate drive requirements allowing direct such as notebook computers and cellular phones. This device operation in 3V circuits. VGS(th) < 1.5V. has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 Mark:304 D G S Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter FDV304P Units VDSS Drain-Source Voltage -25 V VGSS Gate-Source Voltage -8 V ID Drain Current - Continuous -0.46 A - Pulsed -1.5 PD Maximum Power Dissipation 0.35 W TJ,TSTG Operating and Storage Temperature Range -55 to 150